Ferroelectric imprint in annealed Bi0.9La0.1Fe0.9Mn0.1O3 thin films
T. T. Carvalho, F. G. Figueiras, M. P. F. Garcia, A. M. Pereira, J. R., A. Fernandes, J. Perez de la Cruz, S. M. S. Pereira, P. B. Tavares, A., Almeida, J. Agostinho Moreira
TL;DR
This study investigates the processing conditions of Bi0.9La0.1Fe0.9Mn0.1O3 thin films, demonstrating that optimized annealing produces high-quality ferroelectric films with imprint, relevant for ferroelectric device applications.
Contribution
It identifies optimal annealing conditions for producing high-quality ferroelectric Bi0.9La0.1Fe0.9Mn0.1O3 thin films with specific surface and structural properties.
Findings
Annealed films exhibit ferroelectric imprint.
Optimized processing yields smooth, monophasic films with (100)c orientation.
Low substrate temperature plus annealing improves film quality.
Abstract
The present work reports the study of the optimized processing conditions of Bi0.9La0.1Fe0.9Mn0.1O3 thin films, grown by RF sputtering on platinum metalized silicon substrates. The combination of deposition at relatively low substrate temperature followed by adequate ex situ annealing leads to thin films with smooth surface morphology and the formation of a high-quality monophasic layer, with the (100)c preferable orientation. The annealed films show ferroelectric imprint.
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Taxonomy
TopicsFerroelectric and Piezoelectric Materials · Multiferroics and related materials · Acoustic Wave Resonator Technologies