Angular momentum and topology in semiconducting single-wall carbon nanotubes
W. Izumida, R. Okuyama, A. Yamakage, R. Saito

TL;DR
This paper classifies semiconducting single-wall carbon nanotubes based on orbital angular momentum, revealing how valley coupling and boundary shape influence electronic properties and edge states.
Contribution
It introduces a classification scheme using the greatest common divisor of chirality integers and derives an effective lattice model to analyze valley coupling and edge states.
Findings
Different angular momentum classifications lead to distinct degeneracy patterns.
Valley coupling is strong near armchair chiralities.
The number of edge states depends on chirality and boundary shape.
Abstract
Semiconducting single-wall carbon nanotubes are classified into two types by means of orbital angular momentum of valley state, which is useful to study their low energy electronic properties in finite-length. The classification is given by an integer , which is the greatest common divisor of two integers and specifying the chirality of nanotubes, by analyzing cutting lines. For the case that is equal to or greater than four, two lowest subbands from two valleys have different angular momenta with respect to the nanotube axis. Reflecting the decoupling of two valleys, discrete energy levels in finite-length nanotubes exhibit nearly fourfold degeneracy and its small lift by the spin-orbit interaction. For the case that is less than or equal to two, in which two lowest subbands from two valleys have the same angular momentum, discrete levels exhibit lift of fourfold…
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