Three-dimensional resistivity switching between correlated electronic states in 1T-TaS2

TL;DR

This study investigates the resistivity switching mechanisms in 1T-TaS2, revealing that both in-plane and out-of-plane electronic correlations contribute to the observed memristive behavior, challenging previous theoretical predictions.

Contribution

The paper provides experimental evidence that resistivity switching in 1T-TaS2 involves both in-plane and out-of-plane correlations, highlighting the role of inter-layer reordering rather than purely 2D Mott physics.

Findings

Large resistivity anisotropy observed in out-of-plane direction.

Significant resistance ratios in both in-plane and out-of-plane switching.

Metastable state relaxation governed by mesoscopic quantum re-ordering.

Abstract

Recent demonstrations of controlled switching between different ordered macroscopic states by impulsive electromagnetic perturbations in complex materials have opened some fundamental questions on the mechanisms responsible for such remarkable behavior. Here we experimentally address the question of whether two-dimensional (2D) Mott physics can be responsible for unusual switching between states of different electronic order in the layered dichalcogenide 1T-TaS2, or it is a result of subtle inter-layer orbitronic re-ordering of its helical stacking structure. We report on the switching properties both in-plane and perpendicular to the layers by current-pulse injection, the anisotropy of electronic transport in the commensurate ground state, and relaxation properties of the switched metastable state. Contrary to recent theoretical calculations, which predict a uni-directional metal perpendicular to the layers, we observe a large resistivity in this direction, with a temperature-dependent anisotropy. Remarkably, large resistance ratios are observed in the memristive switching both in-plane (IP) and out-of-plane (OP). The relaxation dynamics of the metastable state for both IP and OP electron transport are seemingly governed by the same mesoscopic quantum re-ordering process. We conclude that 1T-TaS2 shows resistance switching arising from an interplay of both IP and OP correlations.