Voltage-Controlled Low-Energy Switching of Nanomagnets through Ruderman-Kittel-Kasuya-Yosida Interactions for Magnetoelectric Device Applications

TL;DR

This paper explores voltage-controlled RKKY interactions between nanomagnets on topological insulators for low-energy, fast switching in memory and logic devices, demonstrating potential for sub-attojoule energy consumption.

Contribution

It introduces a simulation-based analysis of RKKY-mediated nanomagnet switching on topological insulators, highlighting ultra-low energy and fast operation for memory and logic applications.

Findings

Switching energies below 1 attojoule, surpassing conventional methods.

Switching times of a few nanoseconds, comparable to existing technologies.

Demonstration of logic gate functionalities using RKKY interactions.

Abstract

In this letter, we consider through simulation Ruderman-Kittel-Kasuya-Yosida (RKKY) interactions between nanomagnets sitting on a conductive surface, and voltage-controlled gating thereof for low-energy switching of nanomagnets for possible memory and nonvolatile logic applications. For specificity, we consider nanomagnets with perpendicular anisotropy on a three-dimensional topological insulator. We model the possibility and dynamics of RKKY-based switching of one nanomagnet by coupling to one or more nanomagnets of set orientation. Applications for both memory and nonvolatile logic are considered, with follower, inverter and majority gate functionality shown. Sub-attojoule switching energies, far below conventional spin transfer torque (STT)-based memories and even below CMOS logic appear possible. Switching times on the order of a few nanoseconds, comparable to times for STT switching, are estimated for ferromagnetic nanomagnets.