Infrared dielectric properties of low-stress silicon oxide

TL;DR

This paper investigates the infrared dielectric properties of low-stress silicon oxide films, providing estimates of their dielectric function through experimental and modeling methods relevant for optical and electrical applications.

Contribution

It introduces a comprehensive approach to determine the dielectric function of low-stress silicon oxide in the infrared spectrum using experimental and numerical techniques.

Findings

Dielectric function estimated from transmittance spectra

Methods applicable to optical coating design

Enhanced understanding of silicon oxide's infrared properties

Abstract

Silicon oxide thin films play an important role in the realization of optical coatings and high-performance electrical circuits. Estimates of the dielectric function in the far- and mid-infrared regime are derived from the observed transmittance spectrum for a commonly employed low-stress silicon oxide formulation. The experimental, modeling, and numerical methods used to extract the dielectric function are presented.