Anisotropic, multi-carrier transport at the (111) LaAlO$_3$/SrTiO$_3$ interface
Samuel Davis, V. Chandrasekhar, Z. Huang, K. Han, Ariando, T., Venkatesan

TL;DR
This study reveals strong low-temperature anisotropic electrical transport at the (111) LaAlO$_3$/SrTiO$_3$ interface, with contributions from electrons and holes, and effects amplified by UV exposure, expanding understanding of interface physics.
Contribution
It provides the first detailed characterization of anisotropic transport properties at the (111) LAO/STO interface, highlighting the role of holes and UV effects.
Findings
Transport anisotropy is much stronger in (111) samples than in (001) or (110)
Anisotropy appears only at low temperatures below liquid helium point
UV exposure enhances transport anisotropy along one crystal direction
Abstract
The conducting gas that forms at the interface between LaAlO and SrTiO has proven to be a fertile playground for a wide variety of physical phenomena. The bulk of previous research has focused on the (001) and (110) crystal orientations. Here we report detailed measurements of the low-temperature electrical properties of (111) LAO/STO interface samples. We find that the low-temperature electrical transport properties are highly anisotropic, in that they differ significantly along two mutually orthogonal crystal orientations at the interface. While anisotropy in the resistivity has been reported in some (001) samples and in (110) samples, the anisotropy in the (111) samples reported here is much stronger, and also manifests itself in the Hall coefficient as well as the capacitance. In addition, the anisotropy is not present at room temperature and at liquid nitrogen temperatures,…
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