Quantum Memristors with Superconducting Circuits

TL;DR

This paper proposes a quantum memristor design using superconducting circuits, demonstrating its potential for quantum information processing and showing that its hysteretic behavior can be observed with current technology.

Contribution

It introduces a novel quantum memristor architecture based on quasiparticle tunneling in superconducting circuits, advancing the integration of memristive behavior into quantum systems.

Findings

Hysteretic behavior can be observed with current measurement techniques.

The quantum memristor's memory retention can be quantitatively assessed.

The design leverages quasiparticle-induced tunneling for memristive effects.

Abstract

Memristors are resistive elements retaining information of their past dynamics. They have garnered substantial interest due to their potential for representing a paradigm change in electronics, information processing and unconventional computing. Given the advent of quantum technologies, a design for a quantum memristor with superconducting circuits may be envisaged. Along these lines, we introduce such a quantum device whose memristive behavior arises from quasiparticle-induced tunneling when supercurrents are cancelled. For realistic parameters, we find that the relevant hysteretic behavior may be observed using current state-of-the-art measurements of the phase-driven tunneling current. Finally, we develop suitable methods to quantify memory retention in the system.