Flexible MgO barrier magnetic tunnel junctions

TL;DR

This paper reports the development of flexible MgO barrier magnetic tunnel junctions fabricated via transfer printing, demonstrating stable operation under deformation and significantly enhanced tunneling magnetoresistance for flexible electronic memory applications.

Contribution

The study introduces a transfer printing method to create flexible MgO barrier MTJs with improved TMR and mechanical stability, advancing flexible memory device technology.

Findings

Achieved ~300% tunneling magnetoresistance in flexible MTJs.

Demonstrated stable operation under substantial substrate deformation.

Residual strain release enhances switching abruptness.

Abstract

Flexible electronic devices require the integration of multiple crucial components on soft substrates to achieve their functions. In particular, memory devices are the fundamental component for data storage and processing in flexible electronics. Here, we present flexible MgO barrier magnetic tunnel junction (MTJ) devices fabricated using a transfer printing process, which exhibit reliable and stable operation under substantial deformation of the device substrates. In addition, the flexible MTJ devices yield significantly enhanced tunneling magnetoresistance (TMR) of ~300 % and improved abruptness of switching, as residual strain in the MTJ structure induced by the fabrication process is released during the transfer process. This approach could be useful for a wide range of flexible electronic systems that require high performance memory components.