Reconfigurable quadruple quantum dots in a silicon nanowire transistor

TL;DR

This paper introduces a reconfigurable silicon nanowire transistor capable of hosting multiple quantum dots, demonstrating its potential for scalable quantum computing architectures through experimental characterization and analysis.

Contribution

It presents a novel quadruple quantum dot device in silicon using a multi-gate transistor with corner effect exploitation, highlighting its reconfigurability and fabrication advantages.

Findings

Successfully hosts quadruple quantum dots in silicon

Demonstrates versatility in single and double quantum dot regimes

Addresses fabrication variability and scalability potential

Abstract

We present a novel reconfigurable metal-oxide-semiconductor multi-gate transistor that can host a quadruple quantum dot in silicon. The device consist of an industrial quadruple-gate silicon nanowire field-effect transistor. Exploiting the corner effect, we study the versatility of the structure in the single quantum dot and the serial double quantum dot regimes and extract the relevant capacitance parameters. We address the fabrication variability of the quadruple-gate approach which, paired with improved silicon fabrication techniques, makes the corner state quantum dot approach a promising candidate for a scalable quantum information architecture.