Killing Auger recombination in nanostructures by carrier spin polarization

TL;DR

This paper proposes a novel method to significantly suppress Auger recombination in semiconductor nanostructures by injecting spin-polarized carriers, potentially improving the efficiency of devices like lasers.

Contribution

It introduces a new approach to reduce Auger recombination using carrier spin polarization, with a detailed analysis of the suppression mechanism in quantum wells.

Findings

Suppression factor depends on Fermi energy and quantized electron levels.

Method applicable to semiconductor lasers with spin-polarized electron injection.

Predictions can be experimentally tested.

Abstract

In semiconductor nanostructures nonradiative Auger recombination is enhanced by the presence of boundaries which relax the momentum conservation and thereby removes the threshold reduction for these processes. We propose a method to strongly reduce the Auger recombination rate by injecting spin-polarized carriers. Our method is illustrated on the example of a quantum well in which the spin-orbit coupling of conduction band is negligible as compared to valence band and thus holes can be considered as spin-unpolarized. The suppression factor of the Auger recombination is determined by the two-dimensional character of the system, given by the ratio of the Fermi energy of electrons and the separation of the electron levels quantized in the growth direction. Our predictions can be tested experimentally and we discuss their implications for semiconductor lasers relying on injection of spin-polarized electrons.