Hidden quantum mirage by negative refraction in semiconductor P-N junctions

TL;DR

This paper predicts a quantum interference effect in semiconductor P-N junctions caused by negative refraction, leading to a mirror-image response that is robust and could enhance charge and spin transport.

Contribution

It introduces a novel quantum interference phenomenon in P-N junctions based on negative refraction, supported by theoretical predictions and potential experimental platforms.

Findings

Quantum interference behaves as if disturbance originates from a mirror image.

Phenomenon is robust against junction details and disorder.

Potential applications include enhanced charge and spin transport.

Abstract

We predict a novel quantum interference based on the negative refraction across a semiconductor P-N junction: with a local pump on one side of the junction, the response of a local probe on the other side behaves as if the disturbance emanates not from the pump but instead from its mirror image about the junction. This phenomenon is guaranteed by translational invariance of the system and matching of Fermi surfaces of the constituent materials, thus it is robust against other details of the junction (e.g., junction width, potential profile, and even disorder). The recently fabricated P-N junctions in 2D semiconductors provide ideal platforms to explore this phenomenon and its applications to dramatically enhance charge and spin transport as well as carrier-mediated long-range correlation.