Quantization of Hall Resistance at the Metallic Interface between an Oxide Insulator and SrTiO$_{3}$

TL;DR

This paper reports the experimental observation of quantized Hall resistance at a SrTiO3 oxide heterointerface, revealing a single quantum well with multiple subbands and advancing understanding of oxide electronic properties.

Contribution

It demonstrates quantized Hall resistance in oxide heterostructures, showing a single quantum well with multiple subbands, which was previously unexplored in such systems.

Findings

Quantized Hall resistance observed at SrTiO3 interface

High electron mobility exceeding 10,000 cm²/Vs

Interface comprises a single quantum well with ten subbands

Abstract

The two-dimensional metal forming at the interface between an oxide insulator and SrTiO3 provides new opportunities for oxide electronics. However, the quantum Hall effect, one of the most fascinating effects of electrons confined in two dimensions, remains underexplored at these complex oxide heterointerfaces. Here, we report the experimental observation of quantized Hall resistance in a SrTiO3 heterointerface based on the modulation-doped amorphous-LaAlO$_{3}$/SrTiO$_{3}$ heterostructure, which exhibits both high electron mobility exceeding 10000 cm$^{2}$/Vs and low carrier density on the order of ~10$^{12}$ cm$^{-2}$. Along with unambiguous Shubnikov-de Haas oscillations, the spacing of the quantized Hall resistance suggests that the interface is comprised of a single quantum well with ten parallel conducting two-dimensional subbands. This provides new insight into the electronic structure of conducting oxide interfaces and represents an important step towards designing and understanding advanced oxide devices.