Weak (anti)localization in tubular semiconductor nanowires with spin-orbit coupling

TL;DR

This paper analytically studies weak localization and anti-localization effects in tubular semiconductor nanowires with spin-orbit coupling, revealing how SOC influences spin relaxation and magnetoconductivity crossover.

Contribution

It provides a theoretical framework for understanding SOC effects in cylindrical nanowires and fits experimental data to extract transport parameters and quantify SOC types.

Findings

Dresselhaus and Rashba SOC similarly affect spin relaxation.

Crossover from weak localization to anti-localization depends on SOC strength.

Experimental data fitted to theory reveals distinct SOC contributions.

Abstract

We compute analytically the weak (anti)localization correction to the Drude conductivity for electrons in tubular semiconductor systems of zinc blende type. We include linear Rashba and Dresselhaus spin-orbit coupling (SOC) and compare wires of standard growth directions $\langle100\rangle$, $\langle111\rangle$, and $\langle110\rangle$. The motion on the quasi-two-dimensional surface is considered diffusive in both directions: transversal as well as along the cylinder axis. It is shown that Dresselhaus and Rashba SOC similarly affect the spin relaxation rates. For the $\langle110\rangle$ growth direction, the long-lived spin states are of helical nature. We detect a crossover from weak localization to weak anti-localization depending on spin-orbit coupling strength as well as dephasing and scattering rate. The theory is fitted to experimental data of an undoped $\langle111\rangle$ InAs nanowire device which exhibits a top-gate-controlled crossover from positive to negative magnetoconductivity. Thereby, we extract transport parameters where we quantify the distinct types of SOC individually.