Large discrete jumps observed in the transition between Chern states in a ferromagnetic Topological Insulator
Minhao Liu, Wudi Wang, Anthony R. Richardella, Abhinav Kandala, Jian, Li, Ali Yazdani, Nitin Samarth, N. P. Ong

TL;DR
This study observes large, discrete jumps in the transition between Chern states in a ferromagnetic topological insulator, revealing temperature-dependent escape dynamics influenced by dissipation and quantum tunneling effects.
Contribution
It provides the first detailed experimental analysis of rapid Chern state transitions and their dependence on dissipation and temperature in ferromagnetic topological insulators.
Findings
Large resistance jumps occur at ultralow dissipation levels.
Escape rates are strongly suppressed by increasing temperature.
Jumps are spatially correlated over large sample regions.
Abstract
A striking prediction in topological insulators is the appearance of the quantized Hall resistance when the surface states are magnetized. The surface Dirac states become gapped everywhere on the surface, but chiral edge states remain on the edges. In an applied current, the edge states produce a quantized Hall resistance that equals the Chern number C = +1 or -1 (in natural units), even in zero magnetic field. This quantum anomalous Hall effect was observed by Chang et al. With reversal of the magnetic field, the system is trapped in a metastable state because of magnetic anisotropy. Here we investigate how the system escapes the metastable state at low temperatures (10-200 mK). When the dissipation (measured by the longitudinal resistance) is ultralow, we find that the system escapes by making a few, very rapid transitions, as detected by large jumps in the Hall and longitudinal…
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