Controlling Dzyaloshinskii-Moriya Interaction via Chirality Dependent Layer Stacking, Insulator Capping and Electric Field
Hongxin Yang, Olivier Boulle, Vincent Cros, Albert Fert, and Mairbek, Chshiev

TL;DR
This paper demonstrates methods to enhance and control Dzyaloshinskii-Moriya Interaction in ultrathin magnetic films using layer stacking, insulator capping, and electric fields, with potential applications in spintronics.
Contribution
It introduces novel approaches to significantly enhance and electrically modulate DMI in magnetic multilayers, advancing spintronic device design.
Findings
DMI is enhanced by 15-50% through multilayer stacking.
DMI is increased by 60% with oxide capping layers.
Electric fields can modulate DMI with high efficiency.
Abstract
Using first-principle calculations, we demonstrate several approaches to manipulate Dzyaloshinskii-Moriya Interaction (DMI) in ultrathin magnetic films. First, we find that DMI is significantly enhanced when the ferromagnetic (FM) layer is sandwiched between nonmagnetic (NM) layers inducing additive DMI in NM/FM/NM structures. For instance, as Pt and Ir below Co induce DMI of opposite chirality, inserting Co between Pt (below) and Ir (above) in Ir/Co/Pt trilayers enhances the DMI of Co/Pt bilayers by 15\%. Furthermore, in case of Pb/Co/Pt trilayers (Ir/Fe/Co/Pt multilayers), DMI can be enhanced by 50\% (almost doubled) compared to Co/Pt bilayers reaching a very large DMI amplitude of 2.7 (3.2) meV/atom. Our second approach for enhancing DMI is to use oxide capping layer. We show that DMI is enhanced by 60\% in Oxide/Co/Pt structures compared to Co/Pt bilayers. Moreover, we unveiled the…
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