Exciton dynamics in GaAs/(Al,Ga)As core-shell nanowires with shell quantum dots

TL;DR

This study investigates exciton behavior in GaAs/(Al,Ga)As core-shell nanowires, revealing quantum dot formation, exciton lifetimes, and carrier transfer dynamics crucial for optoelectronic applications.

Contribution

It provides new insights into exciton dynamics, quantum dot formation, and carrier transfer mechanisms in core-shell nanowires with potential optoelectronic implications.

Findings

Exciton radiative lifetime in shell quantum dots is 1.7 ns.

Shell quantum dots form due to Al segregation, emitting intense light at 10 K.

Carrier transfer from shell to core increases with temperature.

Abstract

We study the dynamics of excitons in GaAs/(Al,Ga)As core-shell nanowires by continuous-wave and time-resolved photoluminescence and photoluminescence excitation spectroscopy. Strong Al segregation in the shell of the nanowires leads to the formation of Ga-rich inclusions acting as quantum dots. At 10 K, intense light emission associated with these shell quantum dots is observed. The average radiative lifetime of excitons confined in the shell quantum dots is 1.7 ns. We show that excitons may tunnel toward adjacent shell quantum dots and nonradiative point defects. We investigate the changes in the dynamics of charge carriers in the shell with increasing temperature, with particular emphasis on the transfer of carriers from the shell to the core of the nanowires. We finally discuss the implications of carrier localization in the (Al,Ga)As shell for fundamental studies and optoelectronic applications based on core-shell III-As nanowires.