Dopant-controlled single-electron pumping through a metallic island

TL;DR

This paper demonstrates a hybrid silicon-based single-electron pump controlled by dopants, achieving quantized electron transfer via resonant tunneling, with a simple model validated by experimental data.

Contribution

It introduces a dopant-controlled electron pump in silicon with a new resonant tunneling mechanism and a validated deterministic model.

Findings

Successful non-adiabatic quantized electron pumping achieved.

Resonant tunneling through single dopants controls electron transfer.

Model predictions agree with experimental measurements.

Abstract

We investigate a hybrid metallic island / single dopant electron pump based on fully-depleted silicon on insulator technology. Electron transfer between the central metallic island and the leads is controlled by resonant tunneling through single phosphorus dopants in the barriers. Top gates above the barriers are used control the resonance conditions. Applying radio frequency signals to the gates, non-adiabatic quantized electron pumping is achieved. A simple deterministic model is presented and confirmed by comparing measurements with simulations.