Investigating the Temperature Effects on Resistive Random Access Memory (RRAM) Devices

TL;DR

This study analyzes how filament size and resistivity influence the saturated temperature in various RRAM devices, revealing a decrease in temperature with larger filaments and resistivity, and a sudden change at lower values.

Contribution

It provides a thermal reaction model analysis of the impact of filament parameters on RRAM temperature behavior, highlighting the dependence on filament size and resistivity.

Findings

Saturated temperature decreases with increasing filament radius and resistivity.

A sudden change in saturated temperature occurs at lower filament sizes and resistivities.

Results confirm the temperature dependence on filament characteristics in RRAM devices.

Abstract

In this paper, we report the effect of filament radius and filament resistivity on the saturated temperature of ZnO, TiO2, WO3 and HfO2 Resistive Random Access Memory (RRAM) devices. We resort to the thermal reaction model of RRAM for the present analysis. The results substantiate decrease in saturated temperature with increase in the radius and resistivity of filament for the investigated RRAM devices. Moreover, a sudden change in the saturated temperature at a lower value of filament radius and resistivity is observed as against the steady change at the medium and higher value of the filament radius and resistivity. Results confirm the dependence of saturated temperature on the filament size and resistivity in RRAM.