Electron optics with ballistic graphene junctions
Shaowen Chen, Zheng Han, Mirza M. Elahi, K. M. Masum Habib, Lei Wang,, Bo Wen, Yuanda Gao, Takashi Taniguchi, Kenji Watanabe, James Hone, Avik W., Ghosh, Cory R. Dean

TL;DR
This paper demonstrates electron refraction, including negative refraction, across graphene pn junctions using transverse magnetic focusing, confirming theoretical predictions and guiding future electron optics device design.
Contribution
It provides the first robust experimental evidence of negative refraction and perfect lensing in graphene pn junctions, aligning with theoretical models.
Findings
Confirmed Snell's law for electrons in graphene
Observed both positive and negative refraction
Measured angle-dependent transmission coefficients
Abstract
Electrons transmitted across a ballistic semiconductor junction undergo refraction, analogous to light rays across an optical boundary. A pn junction theoretically provides the equivalent of a negative index medium, enabling novel electron optics such as negative refraction and perfect (Veselago) lensing. In graphene, the linear dispersion and zero-gap bandstructure admit highly transparent pn junctions by simple electrostatic gating, which cannot be achieved in conventional semiconductors. Moreover ballistic transport over micron length scales at ambient temperature has been realized, providing an ideal platform to realize a new generation of device based on electron lensing. Robust demonstration of these effects, however, has not been forthcoming. Here we employ transverse magnetic focusing to probe propagation across an electrostatically defined graphene junction. We find perfect…
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Taxonomy
TopicsPhotocathodes and Microchannel Plates · Graphene research and applications · Electron and X-Ray Spectroscopy Techniques
