Microwave-induced resistance oscillations as a classical memory effect

TL;DR

This paper demonstrates that microwave-induced resistance oscillations in electron systems can be explained as a classical memory effect resulting from electron re-collisions, supported by numerical, analytical, and experimental agreement.

Contribution

It introduces a Drude-like model incorporating memory effects to explain microwave-induced resistance oscillations as a classical phenomenon.

Findings

Excellent agreement between numerical and analytical results.

Qualitative agreement with experimental observations.

Re-collisions cause resistance oscillations as a classical memory effect.

Abstract

By numerical simulations and analytical studies, we show that the phenomenon of microwave-induced resistance oscillations can be understood as a classical memory effect caused by re-collisions of electrons with scattering centers after a cyclotron period. We develop a Drude-like approach to magneto-transport in presence of a microwave field, taking account of memory effects, and find an excellent agreement between numerical and analytical results, as well as a qualitative agreement with experiment.