Electronic transport of bilayer graphene with asymmetry line defects

TL;DR

This study investigates how asymmetry line defects in bilayer graphene create localized states that form conductive channels, significantly affecting electric conductivity, with potential applications in nanotechnology.

Contribution

It introduces the concept of line defect-induced conductive channels in bilayer graphene and analyzes their impact on electric transport properties.

Findings

Line defects create localized states around the defect line.

Line defects form one-dimensional conductive channels.

Conductivity is significantly affected by the presence of line defects.

Abstract

In this paper, we study the quantum properties of a bilayer graphene with (asymmetry) line defects. The localized states are found around the line defects. Thus, the line defects on one certain layer of the bilayer graphene can lead to an electric transport channel. By adding a bias potential along the direction of the line defects, we calculate the electric conductivity of bilayer graphene with line defects using Landauer-B\"{u}ttiker theory, and show that the channel affects the electric conductivity remarkably by comparing the results with those in a perfect bilayer graphene. This one-dimensional line electric channel has the potential to be applied in the nanotechnology engineering.