Topological Phases in InAs$_{1-x}$Sb$_x$: From Novel Topological Semimetal to Majorana Wire
Georg W. Winkler, QuanSheng Wu, Matthias Troyer, Peter Krogstrup, and, Alexey A. Soluyanov

TL;DR
This paper explores InAs$_{1-x}$Sb$_x$ alloys, particularly CuPt-ordered InAs$_{0.5}$Sb$_{0.5}$, revealing their potential for topological phases and large intrinsic spin-orbit interactions, which are promising for quantum computing applications.
Contribution
It demonstrates that ordered InAs$_{1-x}$Sb$_x$ alloys have significantly larger intrinsic spin-orbit coupling and can realize novel topological semimetal phases, advancing materials for topological quantum devices.
Findings
InAs$_{0.5}$Sb$_{0.5}$ exhibits spin splittings up to 20 times larger than InSb.
CuPt-structure induces a topological semimetal with triple degeneracy points.
Strain can tune the material into a topological insulator or a normal semiconductor.
Abstract
Superconductor proximitized one-dimensional semiconductor nanowires with strong spin-orbit interaction (SOI) are at this time the most promising candidates for the realization of topological quantum information processing. In current experiments the SOI originates predominantly from extrinsic fields, induced by finite size effects and applied gate voltages. The dependence of the topological transition in these devices on microscopic details makes scaling to a large number of devices difficult unless a material with dominant intrinsic bulk SOI is used. Here we show that wires made of certain ordered alloys InAsSb have spin-splittings up to 20 times larger than those reached in pristine InSb wires. In particular, we show this for a stable ordered CuPt-structure at , which has an inverted band ordering and realizes a novel type of a topological semimetal with triple…
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