Growth of Epitaxial Graphene: Theory and Experiment

TL;DR

This paper provides a comprehensive review of the recent experimental and theoretical advances in the epitaxial growth of graphene on transition metals and silicon carbide, highlighting techniques, mechanisms, and unresolved challenges.

Contribution

It offers a thorough synthesis of recent literature, experimental methods, theoretical models, and identifies key open problems in the growth of epitaxial graphene.

Findings

Review of experimental growth techniques like CVD, TPG, segregation

Analysis of theoretical methods for understanding growth mechanisms

Identification of unresolved issues in epitaxial graphene growth

Abstract

A detailed review of the literature for the last 5-10 years on epitaxial growth of graphene is presented. Both experimental and theoretical aspects related to growth on transition metals and on silicon carbide are thoroughly reviewed. Thermodynamic and kinetic aspects of growth on all these materials, where possible, are discussed. To make this text useful for a wider audience, a range of important experimental techniques that have been used over the last decade to grow (e.g. CVD, TPG and segregation) and characterize (STM, LEEM, etc.) graphene are reviewed, and a critical survey of the most important theoretical techniques is given. Finally, we critically discuss various unsolved problems related to growth and its mechanism which we believe require proper attention in future research.