Valley and spin pump by scattering at non-magnetic disorders
Xing-Tao An, Jiang Xiao, M.W.-Y. Tu, Hongyi Yu, Vladimir I. Fal'ko,, Wang Yao

TL;DR
This paper reveals that non-magnetic disorder scattering in 2D TMDs can induce valley and spin pumping, offering a new approach for valleytronics and spintronics by turning disorder into a resource.
Contribution
It demonstrates that valley and spin pumping can be achieved through scattering at non-magnetic disorders, independent of specific material properties.
Findings
Valley pump effect driven by charge current in TMD nanoribbons.
Spin pump effect for spin-valley locked holes due to non-magnetic disorder scattering.
Disorders can be harnessed as a resource for valley and spin polarization.
Abstract
In solid, the crystalline structure can endow electron an internal degree of freedom known as valley, which characterizes the degenerate energy minima in momentum space. The recent success in optical pumping of valley polarization in 2D transition metal dichalcogenides (TMDs) has greatly promoted the concept of valley-based informatics and electronics. However, between the demonstrated valley polarization of transient electron-hole pair excitations and practical valleytronic operations, there exist obvious gaps to fill, among which is the valley pump of long-lived charge carriers. Here we discover that the quested valley pump of electrons or holes can be realized simply by scattering at the ubiquitous nonmagnetic disorders, not relying on any specific material property. The mechanism is rooted in the nature of valley as a momentum space index: the intervalley backscattering in general…
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