High-Pressure Synthesis and Superconductivity of Ag-doped Topological Crystalline Insulator SnTe (Sn1-xAgxTe with x = 0-0.5)

TL;DR

This study reports the synthesis of Ag-doped SnTe under high pressure, revealing bulk superconductivity at specific doping levels and providing insights into the superconducting mechanisms of this topological crystalline insulator.

Contribution

It introduces a high-pressure synthesis method for Ag-doped SnTe and demonstrates bulk superconductivity within a specific doping range, advancing understanding of its superconducting properties.

Findings

Bulk superconductivity observed at x=0.15-0.25

Optimal doping level at x=0.2

Superconducting transition temperature of 2.4 K

Abstract

We have synthesized the single-phase polycrystalline samples of Sn1-xAgxTe, Ag-doped topological crystalline insulator SnTe, with a range of x = 0-0.5 using a high-pressure synthesis method. The crystal structure of Sn1-xAgxTe at room temperature is a cubic NaCl-type structure, which does not vary upon Ag substitution. Bulk superconductivity with a transition temperature of 2.4 K was observed for x = 0.15-0.25, and the optimal Ag content was x = 0.2. The Sn1-xAgxTe superconducting phase will be useful for understanding the superconductivity nature and mechanisms of the carrier-doped SnTe system.