Near room-temperature memory devices based on hybrid spin-crossover SiO2 nanoparticles coupled to single-layer graphene nanoelectrodes

TL;DR

This study demonstrates near room-temperature memory devices using hybrid spin-crossover nanoparticles with silica shells coupled to graphene electrodes, showing stable bistable conductance suitable for electronic applications.

Contribution

First demonstration of hybrid spin-crossover nanoparticles with silica shells integrated with graphene electrodes exhibiting stable room-temperature hysteresis.

Findings

Reproducible thermal hysteresis above room temperature

No degradation of conductance levels over cycles

Enhanced robustness of spin-transition compared to previous reports

Abstract

In this paper, we report on the charge transport properties of hybrid nanoparticles (NPs) based on the polymeric 1D compound [Fe(Htrz)2(trz)](BF4), which is one of the most promising SCO systems for designing electronic devices. In particular, we used for the first time hybrid SCO NPs covered with a silica shell and placed in between single-layer graphene electrodes. We evidence a reproducible thermal hysteresis loop in the conductance above room-temperature, meaning that no degradation of the current levels has been detected; we thus conclude that the robustness of the spin-transition is significantly improved as compared with previous results and with other reports where even larger assemblies and SCO objects were involved. This bistability combined with the versatility of graphene represents a promising scenario for a variety of technological applications but also for future sophisticated fundamental studies.