Frequency-dependent polarization-angle-phase-shift in the microwave-induced magnetoresistance oscillations

TL;DR

This paper investigates how the phase shift in microwave-induced magnetoresistance oscillations in high mobility GaAs/AlGaAs 2D electron devices depends on microwave frequency, revealing a frequency-dependent phase shift.

Contribution

It introduces the concept of a microwave frequency dependence of the phase shift in magnetoresistance oscillations, expanding understanding of polarization effects in these systems.

Findings

Phase shift $ heta_0$ varies with microwave frequency.

Analysis averages over smaller contributions to isolate frequency dependence.

Provides insight into polarization-angle effects in magnetoresistance oscillations.

Abstract

Linear polarization angle, $\theta$, dependent measurements of the microwave radiation-induced oscillatory magnetoresistance, $R_{xx}$, in high mobility GaAs/AlGaAs 2D electron devices have shown a $\theta$ dependence in the oscillatory amplitude along with magnetic field, frequency, and extrema-dependent phase shifts, $\theta_{0}$. Here, we suggest a microwave frequency dependence of $\theta_{0} (f)$ using an analysis that averages over other smaller contributions, when those contributions are smaller than estimates of the experimental uncertainty.