Nanopatterning process based on epitaxial masking for the fabrication of electronic and spintronic devices made of La0.67Sr0.33MnO3/LaAlO3/SrTiO3 heterostructures with in situ interfaces

TL;DR

This paper introduces a novel nanopatterning process using epitaxial masking for La0.67Sr0.33MnO3/LaAlO3/SrTiO3 heterostructures, enabling nanoscale device fabrication with preserved interfaces for oxide electronics and spintronics.

Contribution

The authors develop a multistep nanopatterning method combining wet and dry etching, epitaxial masking, and e-beam lithography, specifically tailored for oxide heterostructures with in situ interfaces.

Findings

Achieved ~100 nm resolution in patterning heterostructures.

Successfully fabricated nanoscale devices suitable for oxide spintronics.

Preserved the integrity of interfaces during patterning process.

Abstract

The fabrication of oxide electronics devices is presently hindered by the lack of standardized and well established patterning procedures, applicable down to the nanoscale. In this work, the authors propose a procedure to obtain patterns with resolution around 100 nm on (La,Sr)MnO3/LaAlO3/SrTiO3 heterostructures. Our method is based on a multistep technique, which includes wet and dry etching, epitaxial masking, and e-beam lithography. Our procedure is devised to define independent patterns on the interfacial two dimensional electron gas and on the metallic top electrode, while preserving an all-in situ approach for the heterostructure growth. The authors show results on nano-scale devices based on (La,Sr)MnO3/LaAlO3/SrTiO3, suitable for oxide spintronics applications.