Weak Localization in Few-Layer Black Phosphorus

TL;DR

This study investigates the weak localization effect in few-layer black phosphorus, revealing its temperature and carrier concentration dependence, and providing insights into phase coherence properties through magneto-transport measurements.

Contribution

It provides the first comprehensive analysis of weak localization and phase coherence in few-layer black phosphorus, aligning experimental data with theoretical models.

Findings

Weak localization observed and matches Hikami-Larkin-Nagaoka model

Phase coherence length of 104 nm at 350 mK

Universal conductance fluctuations detected

Abstract

We have conducted a comprehensive investigation into the magneto-transport properties of few-layer black phosphorus in terms of phase coherence length, phase coherence time, and mobility via weak localization measurement and Hall-effect measurement. We present magnetoresistance data showing the weak localization effect in bare p-type few-layer black phosphorus and reveal its strong dependence on temperature and carrier concentration. The measured weak localization agrees well with the Hikami-Larkin-Nagaoka model and the extracted phase coherence length of 104 nm at 350 mK, decreasing as ~T^-0.51+-0.05 with increased temperature. Weak localization measurement allows us to qualitatively probe the temperature-dependent phase coherence time {\tau}, which is in agreement with the theory of carrier interaction in the diffusive regime. We also observe the universal conductance fluctuation phenomenon in few-layer black phosphorus within moderate magnetic field and low temperature regime.