Oxygen vacancy induced room temperature metal-insulator transition in nickelates films and its potential application in photovoltaics
Le Wang, Sibashisa Dash, Lei Chang, Lu You, Yaqing Feng, Xu He,, Kui-juan Jin, Yang Zhou, Hock Guan Ong, Peng Ren, Shiwei Wang, Lang Chen, and, Junling Wang

TL;DR
This study demonstrates reversible control of oxygen vacancies in NdNiO3 films, inducing a room-temperature metal-insulator transition with significant resistance and optical changes, and explores its potential in photovoltaic applications.
Contribution
It reveals a universal method to reversibly induce a metal-insulator transition in nickelates via oxygen vacancies at room temperature, with potential for optoelectronic applications.
Findings
Achieved over six orders of magnitude resistance modulation.
Demonstrated large optical band gap change at room temperature.
Observed induced magnetization of ~50 emu/cm3 due to oxygen vacancies.
Abstract
Oxygen vacancy is intrinsically coupled with magnetic, electronic and transport properties of transition-metal oxide materials and directly determines their multifunctionality. Here, we demonstrate reversible control of oxygen content by post-annealing at temperature lower than 300 degree centigrade and realize the reversible metal-insulator transition in epitaxial NdNiO3 films. Importantly, over six orders of magnitude in the resistance modulation and a large change in optical band gap are demonstrated at room temperature without destroying the parent framework and changing the p-type conductive mechanism. Further study revealed that oxygen vacancies stabilized the insulating phase at room temperature is universal for perovskite nickelates films. Acting as electron donors, oxygen vacancies not only stabilize the insulating phase at room temperature, but also induce a large…
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Taxonomy
TopicsMagnetic and transport properties of perovskites and related materials · Electronic and Structural Properties of Oxides · Advanced Condensed Matter Physics
