A study of the magnetotransport properties of the graphene (III. Bilayer)

TL;DR

This paper analyzes the integer quantum Hall effect in bilayer graphene, extending a single-electron model to reproduce observed features and explore its dependence on gate voltage and magnetic field.

Contribution

It extends a single-electron model to bilayer graphene, successfully reproducing key quantum Hall features and unifying quantum Hall effects in quantum wells and graphene.

Findings

Reproduces IQHE plateaux at n=0,1,2 in bilayer graphene

Shows dependence of quantum Hall effects on gate voltage and magnetic field

Unifies quantum Hall effects in quantum wells and graphene within one model

Abstract

The present paper corresponds to the third work of the author related to the magnetotransport properties concerning on the graphene systems. In the first one the integer quantum Hall effect in the monolayer graphene, (MG), MGIQHE, was analysed, (Hidalgo, 2014). The subject of the second one was the understanding of the fractional quantum Hall also in the MG, (MGFQHE), (Hidalgo, 2015), basing us in our model on the fractional quantum Hall effect in semiconductor quantum systems, Hidalgo (2013). The aim of the present work is the analysis of the integer quantum Hall effect observed in bilayer graphene, (BG), BGIQHE, as a function of both, the gate voltage and the magnetic field. Our approach is a single electron approach, firstly developed for the study of the integer quantum Hall (IQHE) and Shubnikov-de Haas (SdH) effects of a two-dimensional electron gas (2DEG) in any semiconductor quantum well (QW), (Hidalgo, 1995, 1998, 2007). The extension of this model for the BG reproduces its main observed features for the IQHE and the SdH, and as a function of both, the gate voltage and the magnetic field, in particular the plateaux at the values , with n=0,1,2... Therefore, the approach integrates the quantum Hall effects (integer and fractional) observed in both, QW and graphene, in the same physical frame.