Site-controlled InGaN/GaN single-photon-emitting diode

TL;DR

This paper demonstrates the fabrication of site-controlled InGaN/GaN quantum dot diodes that emit single photons, enabling precise placement and integration for quantum photonic applications.

Contribution

It introduces a top-down fabrication method for site-controlled InGaN/GaN quantum dots integrated into LED structures for single-photon emission.

Findings

Successful electrical single-photon emission from the quantum dots.

Precise lithographic control over quantum dot placement and size.

Potential for scalable quantum photonic devices.

Abstract

We report single-photon emission from electrically driven site-controlled InGaN/GaN quantum dots, fabricated from a planar light-emitting diode structure containing a single InGaN quantum well using a top-down approach. The location, dimension, and height of each single-photon-emitting diode are controlled lithographically, providing great flexibility for chip-scale integration.