Perspectives of Racetrack Memory for Large-Capacity On-Chip Memory: From Device to System
Yue Zhang, Chao Zhang, Jiang Nan, Zhizhong Zhang, Xueying Zhang,, Jacques-Olivier Klein, Dafine Ravelosona, Guangyu Sun, Weisheng Zhao

TL;DR
This paper explores the potential of racetrack memory for large-capacity on-chip storage, proposing mechanisms to enhance capacity and evaluating system-level benefits over traditional SRAM caches.
Contribution
It introduces novel mechanisms to increase racetrack memory capacity and validates their effectiveness through device-level modeling and system-level simulations.
Findings
Capacity can be significantly increased using magnetic field assistance, chiral DW motion, and voltage-controlled pinning.
Racetrack memory-based cache outperforms SRAM in execution time and energy efficiency.
System evaluations confirm the feasibility of large-capacity racetrack memory for practical applications.
Abstract
Current-induced domain wall motion (CIDWM) is regarded as a promising way towards achieving emerging high-density, high-speed and low-power non-volatile devices. Racetrack memory is an attractive spintronic memory based on this phenomenon, which can store and transfer a series of data along a magnetic nanowire. However, storage capacity issue is always one of the most serious bottlenecks hindering its application for practical systems. This paper focuses on the potential of racetrack memory towards large capacity. The investigations covering from device level to system level have been carried out. Various alternative mechanisms to improve the capacity of racetrack memory have been proposed and elucidated, e.g. magnetic field assistance, chiral DW motion and voltage-controlled flexible DW pinning. All of them can increase nanowire length, allowing enhanced feasibility of large-capacity…
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Taxonomy
TopicsMagnetic properties of thin films · Ferroelectric and Negative Capacitance Devices · Semiconductor materials and devices
