Magnetotransport in single layer graphene in a large parallel magnetic field
F. Chiappini, S. Wiedmann, M. Titov, A. K. Geim, R. V. Gorbachev, E., Khestanova, A. Mishchenko, K. S. Novoselov, J. C. Maan, and U. Zeitler

TL;DR
This study investigates the impact of large parallel magnetic fields on graphene's electron transport properties, finding that Zeeman splitting effects are masked by electrostatic fluctuations even at high mobility and strong magnetic fields.
Contribution
It provides experimental evidence that Zeeman splitting does not influence graphene transport on h-BN under high parallel magnetic fields due to electrostatic potential fluctuations.
Findings
Parallel magnetic field up to 30 Tesla does not affect graphene transport.
Magnetoresistance is caused by a small perpendicular component of the field.
Zeeman splitting effects are masked by electrostatic potential fluctuations.
Abstract
Graphene on hexagonal boron-nitride (h-BN) is an atomically flat conducting system that is ideally suited for probing the effect of Zeeman splitting on electron transport. We demonstrate by magneto-transport measurements that a parallel magnetic field up to 30 Tesla does not affect the transport properties of graphene on h-BN even at charge neutrality where such an effect is expected to be maximal. The only magnetoresistance detected at low carrier concentrations is shown to be associated with a small perpendicular component of the field which cannot be fully eliminated in the experiment. Despite the high mobility of charge carries at low temperatures, we argue that the effects of Zeeman splitting are fully masked by electrostatic potential fluctuations at charge neutrality.
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