Effect of doping and In-composition on gain of long wavelength III-nitride QDs

TL;DR

This paper calculates the material gain of long wavelength III-nitride InN and AlInN quantum dots, considering strain and inhomogeneity, and finds doping and size effects crucial for optical communication applications.

Contribution

It provides a detailed analysis of how doping and quantum dot size influence gain and wavelength in long wavelength III-nitride QDs, including strain effects.

Findings

p-doping enhances gain efficiency

QD size, especially radius, controls wavelength

n-doped QDs are promising for broad band lasers

Abstract

In this work, we calculate material gain for long wavelength III-nitride InN and AlInN quantum dot (QD) structures. Strain and QD inhomogeneity are included in the calculations. The study covers (800-2300 nm) wavelength range which is important in optical communications. While p-doping is shown to be efficient to increasing gain, changing QD size (especially QD radius) is more efficient to vary wavelength. The results predicted that n-doped QD structures are promises for broad band laser applications.