Direct Observation of Localized Radial Oxygen Migration in Functioning Tantalum Oxide Memristors

TL;DR

This study uses in-operando x-ray spectromicroscopy to directly observe oxygen migration in tantalum oxide memristors, revealing temperature-activated processes critical for device operation and failure.

Contribution

It provides the first direct observation of localized oxygen migration in functioning tantalum oxide memristors and models the process using thermophoretic and diffusion forces.

Findings

Oxygen migration forms ring-like concentration patterns.

Temperature activates oxygen migration significantly.

Oxygen migration influences device failure mechanisms.

Abstract

Oxygen migration in tantalum oxide, a promising next-generation storage material, is studied using in-operando x-ray absorption spectromicroscopy and is used to microphysically describe accelerated evolution of conduction channel and device failure. The resulting ring-like patterns of oxygen concentration are modeled using thermophoretic forces and Fick diffusion, establishing the critical role of temperature-activated oxygen migration that has been under question lately.