Locally rewritable codes for resistive memories
Yongjune Kim, Abhishek A. Sharma, Robert Mateescu, Seung-Hwan Song,, Zvonimir Z. Bandic, James A. Bain, B. V. K. Vijaya Kumar
TL;DR
This paper introduces locally rewritable codes (LWC) for resistive memories, inspired by locally repairable codes (LRC), to enhance endurance and power efficiency by enabling localized data rewriting.
Contribution
It establishes a duality between LRC and LWC, allowing existing LRC construction methods to be adapted for LWC in resistive memories.
Findings
LWC improve endurance and power consumption in resistive memories.
Duality between LRC and LWC enables new code constructions.
Existing LRC methods can be applied to develop LWC.
Abstract
We propose locally rewritable codes (LWC) for resistive memories inspired by locally repairable codes (LRC) for distributed storage systems. Small values of repair locality of LRC enable fast repair of a single failed node since the lost data in the failed node can be recovered by accessing only a small fraction of other nodes. By using rewriting locality, LWC can improve endurance limit and power consumption which are major challenges for resistive memories. We point out the duality between LRC and LWC, which indicates that existing construction methods of LRC can be applied to construct LWC.
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