Robust tunability of magnetorestance in Half-Heusler RPtBi (R = Gd, Dy, Tm, and Lu) compounds
Eundeok Mun, Sergey L. Bud'ko, Paul C. Canfield

TL;DR
This study investigates the magnetic field-dependent transport properties of RPtBi half-Heusler compounds, revealing large, tunable magnetoresistance and complex Hall effects, with potential for advanced magnetic and thermoelectric applications.
Contribution
It demonstrates the tunability of magnetoresistance in RPtBi compounds through lanthanide contraction and explores the underlying mechanisms of non-trivial MR behavior.
Findings
Large non-saturating MR up to 300 K under moderate fields
Sign change in Hall coefficient for Gd-based compound around 120 K
Enhanced thermoelectric power under magnetic field, up to 100 μV/K
Abstract
We present the magnetic field dependencies of transport properties for PtBi ( = Gd, Dy, Tm, and Lu) half-Heusler compounds. Temperature and field dependent resistivity measurements of high quality PtBi single crystals reveal an unusually large, non-saturating magnetoresistance (MR) up to 300 K under a moderate magnetic field of = 140 kOe. At 300 K, the large MR effect decreases as the rare-earth is traversed from Gd to Lu and the magnetic field dependence of MR shows a deviation from the conventional behavior. The Hall coefficient () for = Gd indicates a sign change around 120 K, whereas curves for = Dy, Tm, and Lu remain positive for all measured temperatures. At 300 K, the Hall resistivity reveals a deviation from the linear field dependence for all compounds. Thermoelectric power measurements on this family show strong temperature and…
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