Shubnikov-de Haas oscillations of high mobility holes in monolayer and bilayer WSe$_2$: Landau level degeneracy, effective mass, and negative compressibility
Babak Fallahazad, Hema C. P. Movva, Kyounghwan Kim, Stefano Larentis,, Takashi Taniguchi, Kenji Watanabe, Sanjay K. Banerjee, Emanuel Tutuc

TL;DR
This study investigates the magnetotransport properties of high mobility holes in monolayer and bilayer WSe$_2$, revealing Landau level degeneracy, subband structure, and negative compressibility through analysis of Shubnikov-de Haas oscillations and quantum Hall states.
Contribution
It provides detailed characterization of Landau level degeneracy, effective mass, and subband structure in monolayer and bilayer WSe$_2$, highlighting negative compressibility effects.
Findings
Landau level degeneracy is predominantly two-fold in both monolayer and bilayer WSe$_2$
Fourier analysis reveals two subbands in bilayer WSe$_2$
Effective hole mass is approximately 0.45 times the electron mass
Abstract
We study the magnetotransport properties of high mobility holes in monolayer and bilayer WSe, which display well defined Shubnikov-de Haas (SdH) oscillations, and quantum Hall states (QHSs) in high magnetic fields. In both mono and bilayer WSe, the SdH oscillations and the QHSs occur predominantly at even filling factors, evincing a two-fold Landau level degeneracy. The Fourier transform analysis of the SdH oscillations in bilayer WSe reveal the presence of two subbands localized in the top or the bottom layer, as well as negative compressibility. From the temperature dependence of the SdH oscillations we determine a hole effective mass of for both mono and bilayer WSe.
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