Simulations of a silicon pixel based on MOS Deep Trapping Gate Principle

TL;DR

This paper presents simulations of a silicon pixel detector based on the MOS Deep Trapping Gate principle, exploring its response to minimum ionizing particles and the effects of design parameters using quantum simulation tools.

Contribution

It provides a quantitative analysis of a silicon pixel detector with a Ge-based buried gate, including parameter effects and a proposed fabrication process, advancing the development of radiation-hard particle detectors.

Findings

Measurable signal for minimum-ionizing particles within limited silicon thickness

Parameter variations like pixel thickness and size influence detector operation

Proposed fabrication techniques include deep impurity implantation and epitaxial growth

Abstract

The concept of the deep trapping gate device was introduced fairly recently on the basis of technological and transport simulations currently used in the field of classical electron devices. The concept of a buried gate containing localized deep level centers for holes (Deep Trapping Gate or DTG) renders possible the operation of this field effect pixel detector. One alternative to Deep Level introduction is the use of a quantum box, which is a hole quantum-well and an electron barrier. In all of these cases the buried gate modulates the drain-source current. This principle was formerly evaluated with realistic simulations parameters and this shows that a measurable signal is obtained for an energy deposition of a minimum-ionizing particle within a limited silicon thickness. In this work a quantitative study of the response of such a pixel to Minimum Ionizing Particles. The influence of some parameters such as the thickness of the pixel and its lateral dimensions, on the operation of the pixel is studied here using current available simulation tools, in quantum mode when a narrow Ge layer is used as a buried gate. A bias sequence is introduced here to separate the operation of the pixel in detection and readout mode. The first frabrication technique introduced is deep impurity implantation, followed by annealing. Recent work on quantum boxes and dots opens the possibility to the use Ge boxes as a DTG.Ion implantation and alternative methods such an epitaxial growth DTG can be reasonably considered. If the related bottlenecks are overcome the pixel should be a good candidate for high luminosity particle collider inner detectors, provides that its potential radiation hardness is proven sufficient for these applications.