Giant Plasmon Instability in Dual-Grating-Gate Graphene Field-Effect Transistor

TL;DR

This paper demonstrates giant plasmon instability in dual-grating-gate graphene transistors induced by dc current, achieving high growth rates in the terahertz/mid-infrared range at room temperature, surpassing traditional semiconductors.

Contribution

It reveals the combined effect of Dyakonov-Shur and Ryzhii-Satou-Shur instabilities as the origin of giant plasmon growth rates in graphene transistors.

Findings

Total growth rate exceeds 4×10^{12} s^{-1} at room temperature.

Giant instability occurs in the terahertz/mid-infrared frequency range.

Growth rate is an order of magnitude larger than in traditional 2D electron gases.

Abstract

We study instability of plasmons in a dual-grating-gate graphene field-effect transistor induced by dc current injection using self-consistent simulations with the Boltzmann equation. With only the acoustic-phonon-limited electron scattering, it is demonstrated that a total growth rate of the plasmon instability, with the terahertz/mid-infrared range of the frequency, can exceed $4\times10^{12}$ s$^{-1}$ at room temperature, which is an order of magnitude larger than in two-dimensional electron gases based on usual semiconductors. By Comparing the simulation results with existing theory, it is revealed that the giant total growth rate originates from simulataneous occurence of the so-called Dyakonov-Shur and Ryzhii-Satou-Shur instabilities.