Gas phase synthesis of non-bundled, small diameter single-walled carbon nanotubes with near-armchair chiralities

TL;DR

This paper introduces a new floating catalyst method for synthesizing small diameter, non-bundled single-walled carbon nanotubes with near-armchair chiralities, achieving high purity, length, and electrical performance.

Contribution

The study presents a novel synthesis route that produces high-quality, individual SWCNTs with controlled chiralities and minimized bundling, advancing nanotube fabrication techniques.

Findings

Achieved high G/D Raman intensity ratios up to 48.

Produced SWCNTs with lengths up to 4 microns.

Created transparent conductive films with low sheet resistance of 63 Ohms/sq.

Abstract

We present a novel floating catalyst synthesis route for individual, i.e. non-bundled, small diameter single-walled carbon nanotubes (SWCNTs) with a narrow chiral angle distribution peaking at high chiralities near the armchair species. An ex situ spark discharge generator was used to form iron particles with geometric number mean diameters of 3-4 nm and fed into a laminar flow chemical vapour deposition reactor for the continuous synthesis of long and high-quality SWCNTs from ambient pressure carbon monoxide. The intensity ratio of G/D peaks in Raman spectra up to 48 and mean tube lengths up to 4 microns were observed. The chiral distributions, as directly determined by electron diffraction in the transmission electron microscope, clustered around the (n,m) indices (7,6), (8,6), (8,7) and (9,6), with up to 70% of tubes having chiral angles over 20{\deg}. The mean diameter of SWCNTs was reduced from 1.10 to 1.04 nm by decreasing the growth temperature from 880 to 750 {\deg}C, which simultaneously increased the fraction of semiconducting tubes from 67 to 80%. Limiting the nanotube gas phase number concentration to approx. 100 000 per cubic centimetre successfully prevented nanotube bundle formation that is due to collisions induced by Brownian diffusion. Up to 80 % of 500 as-deposited tubes observed by atomic force and transmission electron microscopy were individual. Transparent conducting films deposited from these SWCNTs exhibited record low sheet resistances of 63 Ohms/sq. at 90 % transparency for 550 nm light.