Spin polarization control in a 2-dimensional semiconductor

TL;DR

This paper explores how electric fields can rapidly control spin polarization in 2D semiconductors, specifically III-VI monochalcogenide monolayers, to improve spintronic device performance.

Contribution

It demonstrates a method to achieve efficient spin depolarization in 2D semiconductors through symmetry analysis and perturbation theory, advancing spin control techniques.

Findings

Electric fields enable fast spin depolarization.

Symmetry analysis guides spin manipulation.

Material properties are key for control efficiency.

Abstract

Long carrier spin lifetimes are a double-edged sword for the prospect of constructing "spintronic" logic devices: Preservation of the logic variable within the transport channel or interconnect is essential to successful completion of the logic operation, but any spins remaining past this event will pollute the environment for subsequent clock cycles. Electric fields can be used to manipulate these spins on a fast timescale by careful interplay of spin-orbit effects, but efficient controlled depolarization can only be completely achieved with amenable materials properties. Taking III-VI monochalcogenide monolayers as an example 2D semiconductor, we use symmetry analysis, perturbation theory, and ensemble calculation to show how this longstanding problem can be solved by suitable manipulation of conduction electrons.