Large Magnetoresistance in Compensated Semimetals TaAs$_2$ and NbAs$_2$
Zhujun Yuan, Hong Lu, Yongjie Liu, Junfeng Wang, Shuang Jia
TL;DR
This study reports large low-temperature magnetoresistance in TaAs$_2$ and NbAs$_2$, attributed to electron-hole compensation and high mobility, with MR magnitude depending on sample quality.
Contribution
It provides the first detailed analysis of large magnetoresistance in TaAs$_2$ and NbAs$_2$, linking it to compensated semimetal behavior and sample quality effects.
Findings
MR exceeds 5000% at 2 K and 9 T
MR deviates from parabolic dependence above 10 T
MR magnitude depends on sample quality
Abstract
We report large magnetoresistance (MR) at low temperatures in single-crystalline nonmagnetic compounds TaAs and NbAs. Both compounds exhibit parabolic-field-dependent MR larger than in a magnetic field of 9 Tesla at 2 K. The MR starts to deviate from parabolic dependence above 10 T and intends to be saturated in 45 T for TaAs at 4.2 K. The Hall resistance measurements and band structural calculations reveal their compensated semimetal characteristics. The large MR at low temperatures is ascribed to a resonance effect of the balanced electrons and holes with large mobilities. We also discuss the relation of the MR and samples' quality for TaAs and other semimetals. We found that the magnitudes of MR are strongly dependent on the samples' quality for different compounds.
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