Model for computing kinetics of the graphene edge epitaxial growth on copper

TL;DR

This paper presents a kinetic model for graphene edge growth on copper surfaces, analyzing atom and dimer dynamics to predict growth rates and profiles under various conditions, including thermal cycling.

Contribution

It introduces a coupled kinetic model for carbon atom and dimer dynamics on copper, providing detailed predictions of graphene growth rates and concentration profiles.

Findings

Growth speed varies with temperature and pressure.

Spatial concentration profiles of atoms and dimers are characterized.

Thermal cycling effects on island growth are analyzed.

Abstract

A basic kinetic model that incorporates a coupled dynamics of the carbon atoms and dimers on a copper surface is used to compute growth of a single-layer graphene island. The speed of the island's edge advancement on Cu[111] and Cu[100] surfaces is computed as a function of the growth temperature and pressure. Spatially resolved concentration profiles of the atoms and dimers are determined, and the contributions provided by these species to the growth speed are discussed. Island growth in the conditions of a thermal cycling is studied.