Vanadium Dioxide: Metal-Insulator Transition, Electrical Switching and Oscillations. A Review of State of the Art and Recent Progress

TL;DR

This review discusses vanadium dioxide's metal-insulator transition, electrical switching, and oscillations, highlighting its potential for oxide electronics and neural network applications.

Contribution

It provides a comprehensive overview of recent progress and state-of-the-art developments in VO2-based electronic devices and their dynamic behaviors.

Findings

VO2 exhibits S-shaped I-V characteristics with electrical switching.

Relaxation oscillations occur in circuits with VO2 switching devices.

Potential applications include oxide electronic devices and neural network elements.

Abstract

Vanadium dioxide is currently considered as one of the most promising metarials for oxide elcteronics. Both planar and sandwich thin-film MOM devices based on VO2 exhibit electrical switching with an S-shaped I-V characteristic, and this switching effect is associated with the metal-insulator transition (MIT). In an electrical circuit containing such a switching device, relaxation oscillations are observed if the load line intersects the I-V curve at a unique point in NDR region. All these effects are potentially prospective for designing various devices of oxide electronics, particularly, elements of dynamical neural networks based on coupled oscillators.