Occupation probabilities and current densities of bulk and edge states of a Floquet topological insulator
Hossein Dehghani, Aditi Mitra

TL;DR
This paper investigates the occupation probabilities and current densities of bulk and edge states in a Floquet topological insulator modeled by irradiated graphene, revealing how different topological phases and laser parameters influence these properties.
Contribution
It provides a detailed analysis of occupation and current density profiles in various Floquet topological phases of irradiated graphene, highlighting the effects of laser frequency and symmetry breaking.
Findings
Edge states depend on laser frequency and topological phase.
Resonant processes lead to high effective temperature occupation of edge states.
Inversion symmetry breaking causes a net current density and charge imbalance.
Abstract
Results are presented for the occupation probabilities and current densities of bulk and edge states of half-filled graphene in a cylindrical geometry, and irradiated by a circularly polarized laser. It is assumed that the system is closed, and that the laser has been switched on as a quench. Laser parameters corresponding to some representative topological phases are studied: one where the Chern number of the Floquet bands equals the number of chiral edge modes, a second where anomalous edge states appear in the Floquet Brillouin zone boundaries, and a third where the Chern number is zero, yet topological edge states appear at the center and boundaries of the Floquet Brillouin zone. Qualitative differences are found for the high frequency off-resonant and low frequency on-resonant laser with edge states arising due to resonant processes occupied with a high effective temperature on the…
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Taxonomy
TopicsMechanical and Optical Resonators · Quantum optics and atomic interactions · Geophysics and Sensor Technology
