A microwave field-driven transistor-like skyrmionic device with the microwave current-assisted skyrmion creation

TL;DR

This paper proposes a microwave-driven skyrmionic device with transistor-like functionality, demonstrating skyrmion motion control via microwave fields and gate voltages, and showing microwave current-assisted skyrmion creation to enhance device operation.

Contribution

It introduces a novel microwave field-driven skyrmionic device with transistor-like behavior, including mechanisms for skyrmion motion control and creation, advancing skyrmion-based spintronic technology.

Findings

Microwave fields can drive skyrmion motion via spin waves.

Gate voltage can control skyrmion movement.

Microwave current reduces skyrmion creation threshold.

Abstract

Magnetic skyrmion is a topologically protected domain-wall structure at nanoscale, which could serve as a basic building block for advanced spintronic devices. Here, we propose a microwave field-driven skyrmionic device with the transistor-like function, where the motion of a skyrmion in a voltage-gated ferromagnetic nanotrack is studied by micromagnetic simulations. It is demonstrated that the microwave field can drive the motion of a skyrmion by exciting propagating spin waves, and the skyrmion motion can be governed by a gate voltage. We also investigate the microwave current-assisted creation of a skyrmion to facilitate the operation of the transistor-like skyrmionic device on the source terminal. It is found that the microwave current with an appropriate frequency can reduce the threshold current density required for the creation of a skyrmion from the ferromagnetic background. The proposed transistor-like skyrmionic device operated with the microwave field and current could be useful for building future skyrmion-based circuits.