High-speed modulator with interleaved junctions in zero-change CMOS photonics

TL;DR

This paper demonstrates a high-speed microring depletion modulator fabricated in standard 45 nm CMOS, achieving a 13 GHz bandwidth with efficient modulation through innovative T-shaped junctions.

Contribution

It introduces a novel T-shaped lateral p-n junction design in zero-change CMOS photonics for enhanced modulation bandwidth.

Findings

Achieved 13 GHz 3 dB bandwidth in the device

Demonstrated effective wavelength shift of 9 pm/V

Fabricated using standard 45 nm CMOS process

Abstract

A microring depletion modulator is demonstrated with T-shaped lateral p-n junctions used to realize efficient modulation while maximizing the RC limited bandwidth. The device having a 3 dB bandwidth of 13 GHz has been fabricated in a standard 45 nm microelectronics CMOS process. The cavity has a linewidth of 17 GHz and an average wavelength-shift of 9 pm/V in reverse-bias conditions.