Light-effect transistor (LET) with multiple independent gating controls for optical logic gates and optical amplification

TL;DR

This paper introduces a light-effect transistor (LET) with multiple independent optical gates, enabling advanced optical logic and amplification, offering a scalable hybrid electronic-optical component without traditional FET fabrication complexities.

Contribution

The paper presents the design and characterization of a novel LET device with multiple optical gates, demonstrating functionalities like optical logic and amplification, advancing electronic-optical integration.

Findings

Achieved high on/off ratios (~1.0x10^6) in prototype LETs.

Demonstrated optical logic gate and amplification functionalities.

Subthreshold swing of ~0.3 nW/decade in devices.

Abstract

Modern electronics are developing electronic-optical integrated circuits, while their electronic backbone, e.g. field-effect transistors (FETs), remains the same. However, further FET down scaling is facing physical and technical challenges. A light-effect transistor (LET) offers electronic-optical hybridization at the component level, which can continue Moore's law to the quantum region without requiring a FET's fabrication complexity, e.g. a physical gate and doping, by employing optical gating and photoconductivity. Multiple independent gates are therefore readily realized to achieve unique functionalities without increasing chip space. Here we report LET device characteristics and novel digital and analog applications, such as optical logic gates and optical amplification. Prototype CdSe-nanowire-based LETs show output and transfer characteristics resembling advanced FETs, e.g. on/off ratios up to ~1.0x10^6 with a source-drain voltage of ~1.43 V, gate-power of ~260 nW, and subthreshold swing of ~0.3 nW/decade (excluding losses). Our work offers new electronic-optical integration strategies and electronic and optical computing approaches.